 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Data Sheet 10Gb/s Compact InP MZ Modulator with DWDM Laser LMC10ZEG Zero Chirp - High Power The LMC10ZEG product, containing the Bookham Ultra High Power Strained Layer DFB laser chip and Zero chirp InP MZ modulator, has been specifically designed for use in 10 Gb/s high performance regional metro and long haul C band DWDM systems. By co-packaging the laser, locker, modulator, VOA in a package with the same footprint area as the industry standard 14-pin, the LMC10 series provides Mach-Zehnder performance at a price similar to lower performance alternatives. The internal optical attenuator allow fibre power stabilisation over life and temperature. The high output power, integral wavelength locking and high extinction ratio provides excellent OSNR to allow the device to be employed on multi-span long haul links. Features: * Variable mean modulated optical power range of 0 to -10dBm * Zero Chirp +/-0.2 alpha * Co-planar differential RF drive 3.0 volts * Suitable for 50GHz ITU applications with +/-20pm accuracy over life * Low Power Dissipation * Industry Standard 14-pin footprint area * Pins on one side to allow increased system density * Unrivalled performance vs size * Integrated VOA * Qualified to Telcordia GR-468 CORE * RoHS 5/6 compliant Applications: * Long Haul DWDM multi-span dispersion compensated links * Regional Metro single spans with no dispersion compensation 1 Data Sheet Using the LMC10ZEG The recommended operational conditions for the LMC10ZEG are as follows: MZ modulator arm DC bias conditions are set at start of life (SOL), (dynamic MZ DC bias control loops are not required). The VOA can be used in a control loop to set the start of life optical output power. Characteristics Parameter Module and Modulator Parameters Case temperature (Tcase) Modulated output power Modulated optical power Output power variation over case temperature AC extinction ratio (unfiltered) AC extinction ratio (filtered) Dispersion penalty SOL Dispersion penalty EOL Data bar arm bias Data arm bias Modulation drive voltage Optical rise time, fall time Tolerable link optical reflection Output optical return loss Optical crossing level Modulator bandwidth Modulator chirp alpha parameter external temp. of Tx case [1] EOL over temperature [2] EOL over temperature EOL [4] [3] Conditions Min Typ Max Unit 0 0 70 7.5 -10 C dBm dBm dB dB dB -1.5 11 10 0.5 EOL, 10.709Gb/s [5] EOL, 10.709Gb/s [5] [6] [6] 1.2 1.8 -3.3 -3.3 1.5 -1 -1 3 35 -14 20 47 [11] dB dB V V V ps dB dB <9mA arm bias current <9mA arm bias current per arm, pk-pk, 10.709Gb/s [7] 20% - 80% [8] [9] [10] 53 % GHz S21, -3dB 10 -0.2 0.2 2 Data Sheet Characteristics (continued) Parameter Laser Source Parameters Laser forward current EOL Change in forward laser current EOL Laser threshold current EOL Variation in laser wavelength with submount temp. Laser forward voltage Laser linewidth Side mode suppression ratio (SMSR) Average relative intensity noise (RIN) Laser modulation bandwidth [13] Conditions Min Typ Max Unit Wavelength locked -30 20 90 EOL at locked wavelength CW FWHM At locked wavelength 200MHz to 8GHz 1 40 5 50 290 30 85 110 2 20 mA mA mA pm/C V MHz dB -140 dB/Hz MHz Parameter TEC and Thermal Parameters Thermistor 0/50 beta coefficient Thermistor resistance TEC current TEC voltage Module power dissipation Conditions Min Typ Max Unit 3825 For locked wavelength [12] EOL, T Case = 70C EOL, T Case = 70C EOL, T Case = 70C 4500 3864 3902 8069 1.1 3 4 K Ohms A V W Parameter Wavelength Locker Parameters Etalon photocurrent at locked wavelength Reference photocurrent at locked wavelength Etalon slope at locking point Reference slope at locked wavelength Etalon / reference current ratio at locking point Wavelength accuracy over life and temperature Temperature coefficient of the wavelength locker Photodiode reverse bias voltage Photodiode dark current EOL Laser drive current tuning coefficient Conditions Min Typ Max Unit EOL EOL EOL EOL [14] [15] [16] 0.08 0.08 0.3 0.1 0.2 -20 9.6 4.75 5 1.3 1.7 7 3 2 20 mA mA uA/pm uA/pm ratio pm pm/C 5.25 100 V nA pm/mA [17] 3 4 7 3 Data Sheet Characteristics (continued) Parameter VOA Parameters VOA power dissipation VOA bias voltage VOA photocurrent (18) (18) (18) Conditions Min Typ Max Unit 320 -8 0 40 mW V mA S11 Test Mask S11 Test Mask Mag S11 [dB] Mag S11 (dB) Frequency (GHz) 4 Data Sheet Glossary BFM CW EOL FWHM Back Facet Monitor diode Continuous wave End of life Full width half maximum MZ SOL Tcase Pk-pk Mach-Zehnder interferometer Start of life Case temperature Peak to peak Notes to Characteristic Tables [1] Refer to Bookham applications document AN0117 for Tx case temperature measurement definition. [2] Specified range over life. Integral VOA set to minimum attenuation. [3] Specified range over life. Integral VOA set to maximum attenuation. [4] Optical power variation over the operational case temperature range of the Tx relative to 30C. Improved power tracking can be achieved by implementing closed loop power control using an external fiber power monitor and the LMC10ZEG variable optical attenuator. [5] Measurement of AC extinction ratio is to be referenced to a Tektronix CSA8000B with 80C08C plug-in module. Test conditions: 10.709Gb/s, 223-1 PRBS NRZ sequence, 4th order Bessel-Thomson filter [where specified]. EOL condition includes variations in ER over the optical power range. [6] Measured with +/-800ps/nm chromatic dispersion, ITU-T G652 optical fibre, 10.709Gb/s, 223-1 PRBS NRZ sequence. The penalty calculation is made at a BER level of 10 -10. RX OSNR > 30dB (35dB target), RBW of 0.1nm. The device is driven directly from a pattern generator. Receiver decision point self optimised for amplitude and phase. [7] The differential modulation voltage is the peak to peak voltage that is required to achieve the required optical extinction ratio. The voltage and its complement must be AC coupled to each of the Data and Data-bar pins. [8] The module is expected to operate without damage into a -14dB optical return loss equivalent to a fibre to air interface. [9] Optical return loss looking back into the LMC10ZEG averaged over polarisation states. [10] Set to nominal 50% at SOL, does not include effects of electrical driver aging. [11] Electro-optic bandwidth. (S21 e/o). This measurement is made as a small signal measurement on each arm separately, 3% smoothed. [12] The thermistor current should not exceed 100 A to prevent self-heating effects. The thermistor resistance varies with temperature according to the following equation: The thermistor resistance varies with temperature according to the following Steinhart-Hart equation, where C1= 1.2156x10-3, C2= 2.1925x10-4, C3=1.5241x10-7 for the thermistor type used. Temperature is required in Kelvin. [13] Measured at operating laser current Iop and an OSA resolution of 0.1nm and a span of 10nm centred on the peak wavelength. [14] Maintain the start of life locking ratio over life to hold wavelength constant. [15] Assumes wavelength is set to ITU wavelength at start of life, closed loop wavelength control by maintaining constant locking ratio. [16] Specified by design, not measured unit to unit. [17] Wavelength variation with change in laser drive current at constant temperature. [18] VOA dissipation, current and voltage limits apply simultaneously. Do not exceed any one limit. Refer to applications document AN0141. Note: AC parameters such as extinction ratio and waveform crossing may be system dependent. 5 Data Sheet Absolute Maximum Ratings Condition Storage case temperature Laser Current Laser Voltage MZ modulator voltage (DC) [1] [2] Min -40 Typ Max 85 600 Unit C mA V -2 -12 -12 -8 50 320 -15 0 3 1.8 13 260 30 0 V mA V mA mW V V A dBm C mm MZ modulator arm bias currents (DC) Optical attenuator bias voltage (DC) [6] Optical attenuator bias current (DC) [6] Optical attenuator power dissipation [6] BFM bias TEC voltage TEC current [3] [3] -3 -1.8 Output optical power (continuous operation) Lead soldering temperature Fiber bend radius [5] [4] Notes: [1] [2] [3] [4] [5] [6] With CW laser off, do not forward bias the MZ arms. Do not exceed the MZ and bias control tap maximum currents Maximum soldering time of 10 seconds, Tx case and fiber must not be subjected to extremes of temperature. Minimum fiber bend radius of 30mm, fiber may be damaged if exceeded. Thermistor operating range must not be exceeded. Optical attenuator voltage and current must be limited to ensure that the maximum power dissipation is not exceeded. Refer to Bookham applications note AN0141. ESD Rating This product is ESD compliant to Class 2 as defined by Telcordia TA-TSY-000870. ESD precautions must be used when handling this device and are required in both production and R&D environments. 6 Data Sheet Schematic Diagram Pin Out Table Pin # 1 2 3 4 5 6 7 8 Function Data bias Data bar bias VOA Connect to -5V Case ground Data bar Case ground Data Pin # 9 10 11 12 13 14 15 16 Function Case ground TEC TEC + Laser anode Thermistor Etalon BFM anode BFM common cathode Reference BFM anode 7 Data Sheet Pin Definitions Pin1 MZ data DC Bias input and Pin 2 MZ data-bar DC Bias input. DC bias voltages for data and data-bar MZ arms. These pins must be connected to a low noise negative DC voltage, typically around -2V (WRT case). These voltages are defined for each Tx in the deliverable data. A precision voltage source must be used, which is capable of sourcing up to 10mA to each pin. Refer to Bookham applications note AN0130 for circuit implementation and filtering suggestions. Pin 3 VOA control pin. VOA control pin. A negative DC voltage (WRT case) between 0V to -8V is applied to pin 3 to control the Variable Optical Attenuator (VOA). The VOA can be used in a control loop with an external power monitor to provide continuous optical power out of the optical fiber. Alternatively the VOA can be used in open loop control, set to a SOL optical power value with the specified range. Pin 4 Unused pin. Unused pin, Recommended that this pin is connected to -5V nominal. Pin 5, 7 and 9 Ground. Package ground connections. Pin 6 MZ Data-bar modulation input and Pin 8 MZ Data modulation input. Operation is typically using differential electrical drive voltages applied to both the Data and Data-bar MZ modulator inputs. AC RF coupling must be used. Pin 10 TEC(-) and Pin 11 TEC(+). The LMC10 contains a Peltier heatpump. Applying a negative voltage on Pin 10 with respect to Pin 11 will cause the internal optics to be cooled relative to the case temperature. Reversing the applied voltage will cause the internal structure to be heated. The heatpump must be used in a feedback controlled circuit in conjunction with the internal thermistor. Pin 12 Laser Anode. The laser is operated with a forward bias current, the laser cathode being connected internally to case ground. Pin 13 Thermistor. The thermistor is used in the TEC control loop for keeping the internal temperature at a constant value. It has a nominal resistance of 10k Ohms at a temperature of 25C and is not polarity sensitive, although one side of the thermistor is connected to package ground. Operating current should be limited to less than 100A to prevent self heating errors. The exact thermistor value is supplied with each Tx as part of the deliverable test data to ensure the correct operating wavelength. Pin 14 Back Facet Monitor Diode Anode (Etalon). The signal from this photodiode carries the spectral response of the wavelength filter. Pin 15 Back Facet Monitor Diode Common Cathode. Common connection for the monitor diode cathodes. Pin 16 Back Facet Monitor Diode Anode (Reference). The signal from this photodiode is the reference signal and is proportional to the power emitted from the rear facet of the laser. The signal from the reference and etalon monitors are used in a control loop to maintain the wavelength of the laser at the defined lock point. 8 Data Sheet Wavelength Locker for the LMC10ZEG The wavelength locker for the LMC10ZEG includes two photodiodes: the Reference photodiode provides a photocurrent proportional to the laser chip facet power, and the Etalon photodiode provides a photocurrent related to wavelength (frequency). In order to lock the LMC10ZEG wavelength, a control circuit should be used which maintains the laser submount temperature constant over life and then controls the wavelength by varying the laser forward current to keep the ratio of the etalon and reference photodiode currents (Locking Ratio) constant. This may be achieved by keeping the discrimination value (LR x Iref) - Iet) at zero, where LR is the target Locking Ratio. Refer to applications document AN0142 for further information on wavelength locking. 9 Lockpoint Lockpoint Data Sheet Package Outline Drawing 10 Data Sheet Typical 10Gb/s Eye Diagram Test Conditions: 10.709Gb/s 223-1PRBS NRZ data. Typical Over Fibre Performance (SMF-28) Test Conditions: 10.709Gb/s 223-1PRBS NRZ data, BER10-12. 11 Data Sheet LMC10 Mounting Guidelines The device must be attached to a heat-sink capable of dissipating a minimum of 4W. The surface of the heat-sink must be smooth (< 0.8 micron Ra) and flat (< 24.8 microns over the area and not convex in form). Attachment screws, thermal interface compounds or interface pads may be used but must not exert stress upon the device. Refer to Bookham applications document AN0117. Note on Maximum Ratings and Handling Precautions It is the nature of this device that unprotected semi-conductor junctions are connected directly to external package pins. Protection of these junctions would have an adverse effect on the performance of the device or the flexibility in its application and use. The user is requested to observe the `Absolute Minimum and Maximum Ratings' in order to prevent damage or destruction of the device. In particular forward biasing the modulator, attenuator or power monitor junctions will lead to catastrophic damage if the current or voltage limits are exceeded. These junctions are also sensitive to ESD and electrical transients. The laser is similarly sensitive to reverse bias, ESD and electrical transients. These can lead to catastrophic device damage. The user is requested to ensure that operation of any control or bias circuits do not introduce electrical transients or adverse bias conditions during switch-on, switch-off or calibration and set-up routines. Appropriate ESD precautions are required in both production and R&D environments. Applications Support The following application notes are available to support customers using the LMC10ZEG: Component Mounting Recommendations For the Bookham Technology LMC10 InP MZ Transmitter Module LMC10 Implementing Dynamic Wavelength Locker Loops For DWDM Optical Systems Compact LMC10 InP MZ Evaluation Board User Document LMC10ZEG Optical Power Adjustment Using the Integral VOA Recommended RF drivers for the LMC10 Integrated Optical Transmitter Product Portfolio Optical component evaluation platforms are available for all Bookham optical products. Contact your regional sales representative for further information. AN0117 AN0142 AN0130 AN0141 AN0137 12 Data Sheet Deliverable Data The following deliverable data is provided as a paper copy with each device and can also be made available as a text file from a customer specific site on a Bookham server with password protection. Parameter Thermistor operating resistance Laser bias current Wavelength operating MZ bias data MZ bias data-bar Locking reference current Locking etalon current Locking current ratio Locker slope sign Laser threshold MZ drive voltage amplitude Wavelength target (ITU-T) Mean modulated optical power Laser current tuning coefficient BFM reference locker slope BFM etalon locker slope [1] [2] Units Ohms mA nm Volts Volts mA mA + or mA Volts nm dBm pm/mA A/pm A/pm Notes: [1] Mean modulated optical power with integral VOA set to minimum attenuation. [2] Positive sign indicates etalon photocurrent increasing with wavelength at lock point. Refer to Bookham applications document AN0142 for locker slope definitions. AC specified parameters may be derived from DC measurement data. 13 Data Sheet RoHS Compliance Bookham is fully committed to environment protection and sustainable development and has set in place a comprehensive program for removing polluting and hazardous substances from all of its products. The relevant evidence of RoHS compliance is held as part of our controlled documentation for each of our compliant products. RoHS compliance parts are available to order, please refer to the ordering information section for further details. Ordering Information: LMC10ZEG (Wavelength) **** - (Connector) J28 = SC/PC J57 = LC J59 = MU **** = last four digits of wavelength value e.g. for p=1533.47nm, ****=3347 WDM wavelength range: C-Band 1528-1565 nm L-Band 1570-1606 nm Standard fibre length 1000 +/- 100 mm (blue jacket) Other connector types are available on request To order the LMC10 on an evaluation board, please use the prefix EV in front on the product code e.g. EVLMC10ZEG****-J28 Bookham reserve the right to change without notice. Contact Information North America Bookham Worldwide Headquarters 2584 Junction Ave. San Jose CA 95134 USA * Tel: +1 408 919 1500 * Fax: +1 408 919 6083 Europe Paignton Office Brixham Road Paignton Devon TQ4 7BE United Kingdom * Tel: +44 (0) 1803 66 2000 * Fax: +44 (0) 1803 66 2801 Asia Shenzhen Office 2 Phoenix Road Futian Free Trade Zone Shenzhen 518038 China * Tel: +86 755 33305888 * Fax: +86 755 33305805 +86 755 33305807 Important Notice Performance figures, data and any illustrative material provided in this data sheet are typical and must be specifically confirmed in writing by Bookham before they become applicable to any particular order or contract. In accordance with the Bookham policy of continuous improvement specifications may change without notice. The publication of information in this data sheet does not imply freedom from patent or other protective rights of Bookham or others. Further details are available from any Bookham sales representative. www.bookham.com sales@bookham.com INVISIBLE LASER RADIATION DO NOT VIEW DIRECTLY WITH OPTICAL INSTRUMENTS CLASS 1M LASER PRODUCT MAX POWER < 500mW WAVELENGTH 1480 - 1620nm CLASS IIIb LASER PRODUCT 14 REFERENCE IEC 60825-1 Edition 1.2 This product complies with 21CFR 1040.10 ISO14001:1996 EMS 504193 TL9000 Rev 3.0 (ISO9001:2000) FM15040 Caution - use of controls or adjustments or performance of procedures other than those specified herein may result in hazardous radiation exposure. BH12848 Rev 1.0 January 2007. (c)Bookham 2005. Bookham is a registered trademark of Bookham Inc. |
Price & Availability of LMC10ZEG
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |